Substrate transistors have narrower base regions than lateral pnp transistors, and are less affected by displacement damage. 1 Evaluation of the Radiation Tolerance of SiGe Heterojunction Bipolar Transistors Under Gamma Exposure J. The OR NOR circuits are based on emitter coupled logic (ECL), using integrated bipolar NPN transistors. Figure 4 shows how typical lateral and substrate pnp transistors are affected by displacement damage from 50 MeV protons. A high gamma radiation hardness of 4H-SiC circuits is performed. Published under an exclusive license by AIP Publishing. damage produced by ionization from gamma rays at equivalent total dose levels. We propose a diffusion-based qualitative explanation of the mechanism of positive/negative ISE in NPN/PNP BJTs in the end. We find the calculations agree with experiments, and the effect of the γ-ray-induced excitation is significantly different from the effects of defect charge state and temperature. In this work, we examine the defect-based model of the ISE by developing a multiscale method for the simulation of the γ-ray irradiation, where the γ-ray-induced electronic excitations are treated explicitly in excited-state first-principles calculations. ABSTRACT-The primary dose effects on an insulated gate bipolar transistor (IGBT) irradiated with a 60Co gamma-ray source are found in both of the components. A micro-computer controlled equipment has been developed which can measure the noise of Fets, NPN and PN bipolar transistors in the frequency range lOHz to. Instead, it is based on the emitter-to-base current ratio called GAMMA (), because the output is taken off the emitter. Going beyond the model requires directly representing the effect of γ-ray irradiation in first-principles calculations, which was not feasible previously. Transistor action in the common collector is similar to the operation explained for the common base, except that the current gain is not based on the emitter-to-collector current ratio, alpha (). The recent defect-based model for silicon bipolar junction transistors (BJTs) achieves quantitative agreement with experiments, but its assumptions on the defect reactions are unverified. 6 Department of EECS University of California, Berkeley EECS 105 Spring 2004, Lecture 15 Prof. Neutron and γ-ray irradiation damages to transistors are found to be non-additive, and this is denoted as the irradiation synergistic effect (ISE).
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